Product | Antimony Sputtering Target | |
Stock No | NS6130-10-1030 | |
CAS | 7440-36-0 | Confirm |
Purity | 99.99% | Confirm |
Diameter | 50.8 mm ± 1mm | Confirm |
Thickness | 3 mm ± 0.5mm | Confirm |
Shape | Round | Confirm |
Backing Plate | Copper (as per customer requirement) | |
Size and Shape | Targets Diameter and thickness can be according to Customer Requirement | |
Conclusion | The specifications Confirm with enterprise standard | |
Quality Control | Each Lot of was tested successfully | |
Main Inspect Verifier | Manager QC |
Assay | 99.99% |
Antimony Sputtering Target is a proven technology capable of depositing thin films from a wide variety of materials on to diverse substrate shapes and sizes. The process is repeatable and can be scaled up from small research and development projects, to production batches involving medium to large substrate areas.
High-purity metals for the best results We have the flexibility to produce Antimony Sputtering Target in shapes and sizes, and we never compromise in the purity of our raw materials. Our finished and semi-finished targets and our anodes are all made from the very highest purity of different metals.
Particulate contamination of thin films is a concern in many industries, including semiconductor manufacturing. Particulates are formed either in the gas phase of the plasma or by flaking off deposited films from wall surfaces. They then become negatively charged and electrostatically trapped in a plasma, where they can increase in size. When the plasma is turned off, or even sooner than that, they can fall onto or be transported otherwise to the substrate. With 0.18 mm feature sizes on a semiconductor wafer, a particle of diameter of 90 nm may result in a killer defect. Particles of this size, and some much larger, are known to grow in plasma processing discharges, including sputtering sources.