Single Crystal Substrates
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GaN Substrate
Gallium Nitride, Purity: >99.9%, Diameter: 4", Si-Doped, N type
GaN Substrate
Product | GaN Substrate | |
Stock No | NS6130-10-1268 | |
CAS | 25617-97-4 | Confirm |
Purity | >99.9% | Confirm |
Thickness | 4 µm ± 1µm | Confirm |
Orientation | C-axis (001) ±1.0o | Confirm |
Resistivity(300K) | <0.5 Ωcm | Confirm |
Dislocation Density | <1×10^8 cm¯2 | Confirm |
Polish | Single Side Polished | Confirm |
Quality Control | Each Lot of was tested successfully | |
Main Inspect Verifier | Manager QC |
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GaN Substrate
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